International School of Oxide Electronics - ISOE 2025

Organized by V. Garcia, S. Fusil, JY. Chauleau,B. Dkhil, S. Matzen, M. Trassin, M. Guennou & K. Bouzehouane

Initiated by the progress in thin film growth since the discovery of high Tc superconductors, the field of Oxide Electronics took off at the end of the 1990’s and is now growing at an exponential pace. Major breakthroughs over the last twenty years include the advent of multiferroics and the discovery of several unexpected phases at oxide interfaces, epitomized by the high-mobility two-dimensional electron gas found at the interface between two band insulators, LaAlO3 and SrTiO3. Novel physical phenomena have also been revealed in ultrathin films of ferroelectric or correlated electron systems, as well as giant responses and phase transitions induced by light or electric field, with potential for innovative devices.

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